Varactor structure and method

ABSTRACT

An improved varactor diode ( 20, 50 ) having first ( 45 ) and second ( 44 ) terminals is obtained by providing a substrate ( 22, 52 ) having a first surface ( 21, 51 ) in which are formed isolation regions ( 28, 58 ) separating first ( 23, 53 ) and second ( 25, 55 ) parts of the diode ( 20, 50 ). A varactor junction ( 40, 70 ) is formed in the first part ( 23, 53 ) and having a first side ( 35, 66 ) coupled to the first terminal ( 45 ) and a second side ( 34, 54 ) coupled to the second terminal ( 44 ) via a sub-isolation buried layer (SIBL) region ( 26, 56 ) extending under the bottom ( 886 ) and partly up the sides ( 885 ) of the isolation regions ( 28, 58 ) to a further doped region ( 30, 32; 60, 62 ) ohmically connected to the second terminal ( 44 ). The first part ( 36, 66 ) does not extend to the SIBL region ( 26, 56 ). The varactor junction ( 40, 70 ) desirably comprises a hyper-abrupt doped region ( 34, 54 ). The combination provides improved tuning ratio, operating frequency and breakdown voltage of the varactor diode ( 20, 50 ) while still providing adequate Q.

FIELD OF THE INVENTION

The present invention generally relates to semiconductor (SC) devicesand integrated circuits (ICs) and, more particularly, structures andmethods for variable capacitance semiconductor devices referred to as“varactors”.

BACKGROUND OF THE INVENTION

Varactor diodes, typically but not always PN junction devices, aredevices whose capacitance varies as a function of the applied reversevoltage. The change in varactor capacitance with applied voltage comesabout because the depletion region of the reverse biased junction widensand narrows as the applied voltage is changed. This change incapacitance with applied voltage can be used to advantage to providetuning and other functions where a voltage variable capacitance isuseful. Varactor diodes are much used for this purpose.

However the usefulness of varactors depends upon a number of factorssuch as the breakdown voltage, the tuning ratio and the seriesresistance. If a sufficiently large reverse voltage is applied, thevaractor will breakdown or fail in generally the same manner as anydiode. Obviously, the maximum tuning voltage that can be applied islimited by the breakdown voltage. Hence, the breakdown voltage needs tobe higher than the operating voltage. The tuning ratio(TR=C_(jv=0)/C_(jv=V)) is defined as the ratio of the capacitance C_(jv)at one junction voltage, e.g., jv=0 volts, to the capacitance at anotherjunction voltage, e.g., jv=V volts, and is a measure of the amount ofcapacitance variation that can be usefully obtained. For example, thehigher the tuning ratio, the greater the tuning range of an oscillatorwhere the varactor diode capacitance C_(jv) is controlling theoscillator frequency. So, it is desirable that the tuning ratio (TR) belarge. Further, even though the varactor is DC reverse biased and littleor no significant DC current flows, it is still carrying AC current sothe series resistance contributes to AC losses. Hence, the seriesresistance of the varactor diode is important since it affects thequality factor (Q) of the varactor as a tuning element. In general, thehigher the series resistance, the lower the Q.

It is usually the case with present day varactors that changing thedevice design or construction to improve one or more of the breakdownvoltage, tuning ratio, or series resistance can adversely affect theothers. Thus, a need continues to exist for improved varactor structuresand methods wherein one or more of these factors can be improvedsimultaneously without significant adverse effect on other varactorproperties.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will hereinafter be described in conjunction withthe following drawing figures, wherein like numerals denote likeelements, and wherein:

FIGS. 1-2 are simplified schematic cross-sectional views throughvaractor diodes according to embodiments of the invention, wherein FIG.1 illustrates a single ended varactor diode and FIG. 2 illustrates adifferential varactor diode;

FIG. 3 shows a simplified schematic plot of doping concentration versusdepth for active regions of the varactor diodes of FIGS. 1-2, accordingto a preferred embodiment of the invention; and

FIGS. 4-13 are simplified cross-sectional views of a varactor diode ofthe type illustrated in FIGS. 1-2 at different stages of manufactureaccording to further embodiments of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The following detailed description is merely exemplary in nature and isnot intended to limit the invention or the application and uses of theinvention. Furthermore, there is no intention to be bound by anyexpressed or implied theory presented in the preceding technical field,background, or the following detailed description.

For simplicity and clarity of illustration, the drawing figuresillustrate the general manner of construction, and descriptions anddetails of well-known features and techniques may be omitted to avoidunnecessarily obscuring the invention. Additionally, elements in thedrawings figures are not necessarily drawn to scale. For example, thedimensions of some of the elements or regions in the figures may beexaggerated relative to other elements or regions to help improveunderstanding of embodiments of the invention.

The terms “first,” “second,” “third,” “fourth” and the like in thedescription and the claims, if any, may be used for distinguishingbetween similar elements and not necessarily for describing a particularsequential or chronological order. It is to be understood that the termsso used are interchangeable under appropriate circumstances such thatthe embodiments of the invention described herein are, for example,capable of operation or fabrication in sequences other than thoseillustrated or otherwise described herein. Furthermore, the terms“comprise,” “include,” “have” and any variations thereof, are intendedto cover non-exclusive inclusions, such that a process, method, article,or apparatus that comprises a list of elements is not necessarilylimited to those elements, but may include other elements not expresslylisted or inherent to such process, method, article, or apparatus. Theterm “coupled,” as used herein, is defined as directly or indirectlyconnected in an electrical or non-electrical manner.

As used herein, the term “semiconductor” is intended to include anysemiconductor whether single crystal, poly-crystalline or amorphous andincluding type IV semiconductors, non-type IV semiconductors, compoundsemiconductors as well as organic and inorganic semiconductors. Further,the terms “substrate” and “semiconductor substrate” are intended toinclude single crystal structures, polycrystalline structures, amorphousstructures, thin film structures, layered structures,semiconductor-on-insulator (SOI) structures, and combinations thereof.The term “semiconductor” is abbreviated as “SC.”

For convenience of explanation and not intended to be limiting, thesemiconductor devices and methods of fabrication are described hereinfor silicon semiconductors but persons of skill in the art willunderstand that other semiconductor materials can also be used. Further,even though the present invention is illustrated for the case of a PNjunction varactor diode, those of skill in the art will understand thatthe embodiments also include any type of rectifying device providing avoltage variable capacitance and whose depletion width depends upon thedoping of the semiconductor and the applied voltage. Non limitingexamples are PN junction diodes, metal-semiconductor diodes andhetero-junction diodes. As used herein the term “metal” is intended toinclude semi-metals, semiconductor-metal alloys and other materials thatare relatively more conductive than the associated semiconductor body orregions.

The various embodiments of the invention described here are illustratedby semiconductor devices and structures of particular conductivity typehaving various P and N doped regions appropriate for that conductivitytype device or structure. But this is merely for convenience ofexplanation and not intended to be limiting. Persons of skill in the artwill understand that devices or structures of opposite conductivity typemay be provided by interchanging conductivity types so that a P-typeregion becomes an N-type region and vice versa. Alternatively, theparticular regions illustrated in what follows may be more generallyreferred to as of a “first conductivity type” and a “second, oppositeconductivity type”, where the first conductivity type may be either N orP type and the second opposite conductivity type is then either P or Ntype, and so forth.

FIGS. 1-2 are simplified schematic cross-sectional views throughvaractor diodes 20, 50 according to embodiments of the invention,wherein FIG. 1 illustrates single ended varactor diode or device 20 andFIG. 2 illustrates differential varactor diode or device 50. Becausethey have many aspects in common, they are initially discussed together.Varactor diode or device 20, 50 comprises substrate 22, 52 having uppersurface 21, 51. Substrate 22, 52 may comprise any of the semiconductormaterials and forms mentioned above as well as others. For convenienceof illustration, it is presumed hereafter to be a silicon substrate, butthis is not intended to be limiting and any semiconductor (SC) materialin any configuration (e.g., monolithic, layered, polycrystalline, etc.)may be used. Devices 20, 50 are further illustrated in the text anddrawings as comprising various N and P layers or regions, such as forexample, 22(P), 24(N), 261(N) and 262(N) collectively 26(N), 30(N),32(N+), 34(N), 36(P+), etc., in FIG. 1 and 52(P), 54(N), 561(N)-563(N)collectively 56(N), 60(N), 62(N+) 641(N) and 642(N) collectively 64(N),661(P+) and 662(P+) collectively 66(P+), etc., in FIG. 2 The parentheticdesignations as (N) or (P) type conductivity are merely for convenienceof explanation and by way of illustration of various embodiments and notintended to be limiting. The inclusion of (+), as for example in (P+) or(N+), indicates that such regions are more heavily doped than regionslacking such designation. Persons of skill in the art will understandthat devices of opposite conductivity type are constructed byinterchanging the doping types of the various exemplary N and P regionsand, as noted above, such regions may be more broadly referred to asbeing of a first conductivity type (which may be either N or P) or beingof a second, opposite, conductivity type which is then either P or N.Devices 20, 50 may be substantially laterally surrounded by dielectricisolation regions, but these may be omitted in other embodiments, andare not shown in the drawings other than exemplary shallow trenchisolation (STI) regions 281, 284; 581, 585 at the extreme left and rightends of FIGS. 1-2 and FIGS. 7-13. Shallow trench isolation (STI) regions281-284 and 581-585 are referred to collectively as STI regions 28, 58,respectively, and have lateral sidewall surfaces 885 and bottom surfaces886 where they intersect SC substrate 22(P). STI regions 282-283 of FIG.1 are separated by distance 286 at surface 21. In FIG. 2, STI regions582-583 are separated by distanced 586 and STI regions 583-584 areseparate by distance 587 at surface 51. Various surface dielectriclayers that are customarily provided for surface passivation, implantscreening or interlayer insulation or isolation are omitted in FIGS. 1-2and other figures to avoid cluttering the drawings and obscuring theinvention. Doped regions 30(N), 60(N); 32(N+), 62(N+) and STI regions282, 283 and 582, 584 in the left and right halves of FIGS. 1-2,respectively, may be annular shaped, in some embodiments, and thereforeinternally connected. Such internal connections so not show in thecross-sectional views of FIGS. 1-2. In other embodiments, doped regions30(N), 60(N); 32(N+), 62(N+) and STI regions 282, 283 and 582, 584 inthe left and right halves of FIGS. 1-2, respectively, may be separateand for doped regions 30(N), 60(N); 32(N+), 62(N+) externally connectedas for example, by conductors overlying surface 21, 51. In still furtherembodiments, some or all of the various regions or layers illustrated inFIGS. 1-2 may terminate at dielectric isolation regions (not shown)lying substantially parallel to and behind and/or before the planes ofFIGS. 1-2. Any of these arrangements is useful.

Substrate 22(P), 52(P) comprises shallow trench isolation (STI) regions28, 58 extending to surface 21, 51. STI regions 28, 58 typicallycomprise insulating dielectric such as silicon oxide, but otherdielectrics may also be used. In FIG. 1, well region 24(N) is providedunderlying and extending substantially between STI regions 282 and 283under central portion 23 of device 20. In FIG. 2, well region 54(N) isprovided underlying and extending substantially between STI regions 582,583 and 584 under central portions 531, 532 (collectively 53) of device50. Sub-isolation buried layer (SIBL) regions 261(N), 262(N) areprovided underlying STI regions 282, 283 respectively, and SIBL regions561(N), 562(N), 563(N) are provided underlying STI regions 582, 583, 584respectively. In further embodiments, SIBL regions (not shown) may alsobe provided under STI regions 281, 284 and 581, 585. Either arrangementmay be used. In portions 25 between STI regions 281-282 and between STIregions 283-284 and in portions 55 between STI regions 581-582 andbetween STI regions 584-585, there are provided doped regions 30(N),60(N) with contact regions 32(N+), 62(N+), respectively, ohmicallycoupled to adjacent SIBL regions 261(N), 262(N) and 561(N), 563(N)respectively.

Doped region 34(N) is located in central portion 23 of device 20 of FIG.1 between STI regions 282-283 in well region 24(N). Region (34N) isdesirably a hyper-abrupt (HA) doped region (see FIG. 3), and ishenceforth referred to as HA region 34(N). As is more fully explainedlater, it is desirable in some embodiments that thickness 42 of HAregion 34(N) in well 24(N) be sufficient to withstand the ratedbreakdown voltage. Located within HA region 34(N) is further dopedregion 36(P+) forming varactor junction 40. To minimize instability, itis desirable in some embodiments that lateral edges 361, 362 of region36(P+) not extend to adjacent STI regions 282, 283. PN junction 40formed between region 36(P+) and HA region 34(N) is the active junctionof device 20. As is explained more fully in connection with FIG. 3, asjunction 40 is reverse biased, HA region 34(N) becomes depleted of freecarriers and supports the applied voltage. The greater the appliedvoltage, the wider the depletion region and the lower the AC capacitanceof device 20. It is this widening (and narrowing) of the depletionregion in response to changes in the applied ˜DC voltage that providesthe desirable variable capacitance associated with varactor diode 20 andallows it to be used, for example as a very compact and stable tuningelement in integrated circuits (ICs). When the depletion region expandsto contact lateral edge 268 of SIBL region 26(N), breakdown can occur.Thus, it is desirable in some embodiments that separation 43 through HAregion 34(N) between junction 40 and lateral edge 268 of SIBL region26(N) be sufficiently large to support the rated reverse voltage ofvaractor diode or device 20. The separation of the junction 40 from theSTI edge can also improve the varactor capacitance stability over time.It is further desirable in some embodiments that separation 43 not beexcessive, since this would increase the AC series resistance ofvaractor diode 20, thereby undesirably lowering its quality factor (Q).Accordingly, it is desirable in some embodiments that separation 43 becomparable to the depletion width at the highest desired reversevoltage. Regions 32(N+) are coupled to terminal 44 and region (36(P+) iscoupled to terminal 45, thereby providing terminals 44, 45 of varactordiode 20. As is explained more fully in connection with FIGS. 4-13, maskregions 46 on surface 21 are conveniently used in determining thelateral extent of HA region 34(N) and region 36(P+) and spacings 42, 43.

Device 50 of FIG. 2 differs from device 20 of FIG. 1 in that device 50contains two varactor diodes 501, 502 in portions 531, 532 (collectively53) that can be used in a differential mode. Regions 52(P), 54(N),56(N), 58, 60(N), 62(N+), 64(N), 66(P+), etc., in FIG. 2 are generallyanalogous to regions 22(P), 24(N), 26(N), 28, 30(N), 32(N+), 34(N),36(P+), etc., of FIG. 1 and the discussion thereof in connection withFIG. 1 is generally applicable to the analogous regions of FIG. 2.Device 50 of FIG. 2 has HA regions 641(N), 642(N) collectively 64(N),and diode forming regions 661(P+), 662(P+) collectively 66, separated bySTI region 583 with underlying SIBL region 562(N). SIBL region 562(N) isohmically coupled to SIBL regions 561(N) and 563(N) via well 54(N), andin other embodiments may or may not have a further conductiveinterconnection overlying surface 51. Although not explicitly shown inFIG. 2, the same conditions apply to the equivalent of distances 42, 43shown in FIG. 1 with respect to each of varactor diodes 501, 502 inportions 531, 532 and the discussion of distances 42, 43 iscorrespondingly relevant to devices 501, 502. Regions 62(N+) are coupledto terminal 74. Region 661(P+) is coupled to terminal 751 and region662(P+) is coupled to terminal 752. Differential action is obtained bydriving terminals 751 and 752 with AC signals having 1800 phasedifference. Differential layout results in improved Q, less siliconarea, and reduced common-mode noise.

FIG. 3 shows simplified schematic plot 80 of doping concentration versusrelative depth from surface 21, 51 through active portions 23 and 531,532 of varactor diodes 20, 50 of FIGS. 1-2, according to a preferredembodiment of the invention. The depth scale on the abscissa is shown inrelative units wherein depth 246 of the peak doping of well region24(N), 54(N) is set at unity. Trace 81 shows the doping profile ofregion 36(P+) and regions 661(P+), 662(P+) (collectively 66(P+)). Trace82 shows the doping profile of HA region 34(P) and regions 641(N) and642(N) (collectively 64(N)). Junctions 40 and 701, 702 (collectively 70)occur where traces 81 and 82 intersect. Trace 83 shows the relativedepth doping profile of WELL regions 24(N) and 54(N). Regions 34(N) and64(N) are referred to as being hyper-abrupt (HA) because the dopingconcentration in this region is reduced moving to the right away fromthe junction 40, 70. Such doping profile enables increased response inthe varactor capacitance with applied reverse voltage. Use of suchhyper-abrupt doping profile is preferred to obtain optimum varactorlinearity but, in other embodiments, other doping profiles may also beused. Either arrangement is useful.

It was found that by constructing varactor diode 20, 50 as describedabove and further described in connection with FIGS. 4-13, that overallimproved properties were obtained with minimum adverse impact on otherproperties. These results are summarized in Table I below, where thedevice of FIGS. 1-3 (and 4-13) is compared to a prior art device ofsubstantially the same overall area. The tuning ratio, breakdown voltageand oscillator frequency tuning range are all improved while stillmaintaining an adequate although somewhat smaller Q.

TABLE I VARACTOR DIODE PERFORMANCE COMPARISON Breakdown Oscillator Q atVoltage at tuning range in Device Type Tuning Ratio 77 GHz 1 μA/μm GHzPrior Art Device 1.4 7.5 ~6.0 volts 3.30 Device 20, 50 2.2 5.0 ~6.5volts 7.25

FIGS. 4-13 are simplified cross-sectional views of varactor diodes 20,50 of the type illustrated in FIGS. 1-3 at different stages 104-113 ofmanufacture showing corresponding structures 204-213, according tofurther embodiments of the present invention. In FIGS. 4-13, manufactureof a varactor diode corresponding to diode 20 of FIGS. 1 and 3 isparticularly illustrated. However, those of skill in the art willunderstand that the same manufacturing sequence also applies to doublediode device 50 of FIG. 2 with appropriate modification of the openingsin the various masks to provide two active regions 501, 502. Based onthe description herein, such modification is within the competence ofthose of skill in the art.

Referring now to manufacturing stage 104 of FIG. 4, substrate 22 havingupper surface 21 is provided. Substrate 22 may be any type of substrateeither monolithic semiconductor or a layered structure with asemiconductor region thereon such as for example and not intended to belimiting an SOI structure, wherein the semiconductor is single crystalor amorphous or polycrystalline or a combination thereof and of any typeof semiconductor material. In a preferred embodiment, a P type substrateof about 10 to 1000 ohm-cm resistivity silicon is suitable. Mask 86 ofthickness 864 is applied and patterned to have closed portions 861, 862,863 and openings 871, 872, 873, 874 collectively 87, in this example. Ina preferred embodiment, mask 86 comprises: (i) relatively thin paddielectric layer 8601 (e.g., silicon oxide) against semiconductorsurface 21, chosen for its compatibility with semiconductor surface 21,and (ii) relatively thicker etch resistant layer (e.g., silicon nitride)8602 chosen for its ability to resist the chemical reactions needed toetch trenches or cavities 881, 882, 883, 884 (collectively 88), intosubstrate 22. Thickness 864 is desirably large enough to act as ablocking mask during subsequent formation of SIBL regions 26(N)underlying cavities or trenches 882, 883 of device 20 and analogousregions of device 50.

Using openings 87, exposed regions of surface 21 of substrate 22 areetched, as for example, by reactive ion etching, to form cavity ortrench 881 under mask opening 871, cavity or trench 882 under maskopening 872, cavity or trench 883 under mask opening 873, and cavity ortrench 884 under mask opening 874, whereby collectively cavities ortrenches 88 are formed under openings 87 to depths 887. In theillustration of FIG. 4, all of cavities or trenches 88 are shown ashaving the same depth 887. In other embodiments, some or all ofindividual cavities or trenches 881-884 may have different depths.Either arrangement is useful. Depth 887 is preferably about 0.3 to 0.5micrometers, but larger or smaller depths may also be used. By way ofexample and not intended to be limiting, cavities 882, 883 (which willbe filled with dielectric to provide STI regions 282, 283 in finisheddevice 20, 50) can have widths 8821, 8831 as small as allowed by thetechnology design rules, preferably about 0.4 to 0.8 micrometer, butlarger or smaller widths may also be used. While it is preferred thatcavities 882, 883 have comparable widths, in other embodiments, theirwidths may be different. Width 8621 under mask portion 862, whichcorresponds approximately to the width of central portion 23 of finisheddevice 20, is usefully in the range of about 0.5 to 4 micrometers, moreconveniently about 1 to 3 micrometers and preferably about 1 to 2micrometers, but larger or smaller widths may also be used. Structure204 results.

Referring now to manufacturing stage 105 of FIG. 5, in a preferredembodiment liners 90, 91 are formed in cavities 88. Dielectricscomprising for example, and not intended to be limiting, silicon oxide,silicon nitride or combinations thereof are useful for liners 90, 91,but other materials may also be used. Sidewall liner 90 formed on cavityor trench sidewalls 885 has thickness 901 preferably about 50 to 150nanometers, but thicker or thinner layers may also be used. Bottom liner91 formed on cavity or trench bottoms 886 has thickness 911 preferablyabout 30 to 70 nanometers, but thicker or thinner layers may also beused. A function of sidewall liner 90 is to control the amount andlocation of dopant implanted in subsequent manufacturing stage 106 ofFIG. 6 adjacent sidewalls 885 of trenches or cavities 88. A function ofbottom liner 91 is to minimize the surface damage of semiconductorbottoms 886 of cavities 88 during the implant carried out in subsequentmanufacturing stage 106. Liners 90, 91 may be of the same or differentmaterials and/or the same or different thicknesses in variousembodiments. Structure 205 results.

Referring now to manufacturing stage 106 of FIG. 6, Implant A isprovided through openings 872, 873 so as to form sub-isolation buriedlayer (SIBL) regions 261(N) and 262(N), collectively 26(N) in cavitiesor trenches 882, 883. SIBL regions 26(N) have sidewall portions 263(N)of thickness 264 and bottom portions 265(N) of thickness 266. Where SIBLregions 26 are intended to be N type, arsenic is a suitable dopant.Sidewall portions 263(N) of SIBL regions 26(N) are separated fromsurface 21 of substrate 22 by distance 267 as a consequence of maskregions 861, 862, 863 of thickness 864 (see FIG. 4) still in place. Inorder to avoid unduly cluttering the drawing, some of the foregoingreference numbers may only be indicated in connection with STI region282 in FIG. 6 and following, but it should be understood that they alsoapply to liners 90, 91 and SIBL region 262(N) associated with STI region283 and any other STI regions 28 and SIBL regions 26(N) being formed, asfor example, in connection with device 50 of FIG. 2. In a preferredembodiment, SIBL regions 26(N) have a substantially uniform dopingusefully in the range of about 1E18 to 5E20 atoms/cm³, more convenientlyin the range of about 1E19 to 3E20 atoms/cm³, and preferably about 2E20atoms/cm³, but higher or lower concentrations can also be used. Depth266 is usefully in the range of about 0.2 to 1 micrometers, moreconveniently of about 0.4 to 0.8 micrometers and preferably of about0.6-0.7 micrometers below trench bottom 886, but larger or smallervalues can also be used. Separation 267 may be controlled, for exampleby adjusting mask thickness 864 (see FIG. 4), depending upon the desireddepth of HA region 34(N) and region 36(P+) to be subsequently formed(e.g., see FIGS. 10 and 12). This allows one to adjust and maintainseparations 42, 43 (see FIGS. 1-2) in a desired range, as has alreadybeen discussed. By way of example, and not intended to be limiting,separation 267 is preferably in the range of about 50 to 100 percent ofdepth 363 of P+region 36(P+) (see FIGS. 1-2) but larger or smallervalues can also be used. Structure 206 results.

Referring now to manufacturing stage 107 of FIG. 7, the remainingportions of mask 86 and liners 90, 91 are removed, cavities 88 filledwith dielectric and the combination planarized so as to leave shallowtrench isolation (STI) regions 281, 282, 283, 284 (collectively 28) intrenches or cavities 881, 882, 883, 884 (collectively 88), respectively,with upper surfaces substantially co-planar with SC surface 21.Chemical-mechanical polishing is a suitable well known planarizationtechnique. Silicon oxide, silicon nitride and combinations thereof arenon-limiting examples of suitable dielectrics for use in STI regions 28,although other dielectric materials, organic and inorganic orcombinations thereof may also be used. Structure 207 results.

Referring now to manufacturing stage 108 of FIG. 8, mask 92 is providedon surface 21 with openings 921 above portions 25 lying between STIregions 281, 282 and 283, 284. Implant B of, for example, phosphorous,is provided through openings 921 into substrate 22(P) to depth 301 atleast substantially equal to separation 267 so as to form regions 30(N)in ohmic contact with SIBL region 261(N) at the left side of STI region282 and with SIBL region 262(N) at the right side of STI region 283. Thepurpose of regions 30(N) is to reduce the series resistance associatedwith varactor diode 20, 50. Regions 30(N) should have a dopingconcentration preferably about 1E19 to 1E20 atoms/cm³, but higher orlower concentrations can also be used. Structure 208 results.

Referring now to manufacturing stage 109 of FIG. 9, mask 92 is removedand mask 46 is applied to surface 21 and over STI regions 28, andpatterned to provide portions 461, 462 that extend from STI regions 282,283 onto central portion 23 by distance 464 from inward edges 2821, 2831at surface 21 of centrally facing sidewalls 8851 of STI regions 282,283. Opening 466 of mask 46 has width 465. Mask 46 is preferably formedof silicon oxide, silicon nitride or a combination thereof. By way ofexample, and not intended to be limiting, mask 46 preferably comprisesabout 30 nanometers of silicon oxide plus about 70 nanometers of siliconnitride, but larger or smaller amounts and other materials may also beused. The purpose of mask 46 is to define the lateral extent (e.g.,width 465) of the relatively low energy implant subsequently used toform regions 36(P+) in a further manufacturing step (e.g., see FIG. 12),thereby providing control over lateral extent 365 of regions 36(P+) soas to achieve the desired separation 42, 43 with respect to associatedSTI regions 28 and SIBL regions 26(N), as has been discussed earlier inconnection with FIGS. 1-2. By adjusting lateral overhang distance 464 aswell as the implant depth, subsequently formed regions 36(P+) can bearranged to not intersect STI regions 283, 284 and not intersect SIBLregions 261(N), 262(N), thereby maintaining separations 42, 43previously discussed (see FIGS. 1 and 12). Structure 209 results.

Referring now to manufacturing stage 110 of FIG. 10, mask 93 is providedover surface 21 and STI regions 28 so as to have opening 931encompassing central portion 23 of width 286 (see FIG. 9) between STIregions 282, 283. Lateral edges 932, 933 of opening 931 determinelateral extent 241 of well 24(N) and, as shown in FIG. 10, arepreferably located approximately centrally over STI regions 282, 283,but other locations may also be used. For example, and not intended tobe limiting, lateral extent 241 should be sufficient to at least includesome portions of SIBL regions 261(N) and 262(N), but may extend to orbeyond portions 25 at the left and right of device 20 underneath regions30(N). Any such arrangement is useful.

Implants C and D may be provided in either order. Implant C throughopening 931 in mask 93 provides HA region 34(N) of depth 341 in centralportion 23, for example, having a dopant concentration corresponding totrace 82 of FIG. 3. Arsenic is a suitable dopant for Implant C. Moregenerally, the peak doping concentration of HA region 34(N) is usefullyin the range of about 1E18 to 1E19 atoms/cm³, more conveniently in therange of about 1E18 to 7E18 atoms/cm³, and preferably about 2E18 to 4E18atoms/cm³, but higher lower concentrations can also be used. The implantenergy is desirably adjusted during implantation so as to achieve thedesired doping profile, an example of which is provided in FIG. 3. Depth341 is usefully in the range of about 0.2 to 0.6 micrometers, moreconveniently about 0.3 to 0.5 micrometers and preferably about 0.4 to0.5 micrometers, but larger or smaller values can also be used.

Implant D through opening 931 in mask 93 provides WELL region 24(N) oflateral extent 241 and depth 242 in central portion 23, for example,having a dopant concentration corresponding to trace 83 of FIG. 3.Phosphorous is a suitable dopant for Implant D. More generally, the peakdoping concentration is preferably about 1E18 to 3E18 atoms/cm³, buthigher or lower concentrations can also be used. The peak dopingconcentration of Implant D is located beneath surface 21 at a depthpreferably of about 0.9 to 1.1 micrometers, but larger or smaller valuescan also be used. Structure 210 results.

Referring now to manufacturing stage 111 of FIG. 11, mask 93 is removedand mask 94 applied having openings 941 over portions 25 between STIregions 281, 282 and between STI regions 283, 284. Central portion 23between STI regions 282, 283 is covered. Implant E is provided to formrelatively shallow highly doped contact regions 32(N+) in regions 30(N)extending to SC surface 21. Arsenic is a suitable impurity with dopantconcentrations in regions 32(N+) preferably about 1E20 to 1E21atoms/cm³, but higher or lower concentrations and other impurities canalso be used. Structure 211 results.

Referring now to manufacturing stage 112 of FIG. 12, mask 94 is removedand mask 96 applied having opening 961 over portion 23 between STIregions 282, 283. Portions 25 are covered. Implant F is provided to formrelatively shallow highly doped contact region 36(P+) of depth 363 in HAregion 34(N) extending to SC surface 21, thereby forming varactorjunction 40. Boron is a suitable impurity with implant dose in regions36(P+) usefully in the range of about 1E15 to 5E15 atoms/cm², moreconveniently in the range of about 2E15 to 4E15 atoms/cm², andpreferably about 3.5E15 atoms/cm² (e.g., see also FIG. 3), but higher orlower doses and other impurities can also be used. Depth 363 is used inpart to further adjust separations 42, 43 and is usefully in the rangeof about 0.1 to 0.25 micrometers, more conveniently about 0.1 to 0.2micrometers and preferably about 0.15 to 0.18 micrometers, but larger orsmaller values can also be used. Structure 212 results. Referring now tomanufacturing stage 113 of FIG. 13, standard back-end processing wellknown in the art is applied to structure 212 to provide conductivecontacts 33 (e.g., one or more silicides) on doped regions 32(N+) and36(P+), surface passivation layer(s) 97 and whatever single ormulti-layer interconnects are desired to couple regions 32(N+) toterminal 44 and region 36(P+) to terminal 45. Device 20 is essentiallycomplete.

According to a first embodiment, there is provided a varactor diode (20,50) having first (45) and second (44) terminals, comprising, a substrate(22, 52) having a first surface (21, 51) and having a first portion (23,53) and second portion (25, 55), one or more isolation regions (28, 58)at the first surface (21, 51) separating the first portion (23, 53) andthe second portion (25, 55) and having lateral sidewalls (885) and abottom (886), a rectifying junction (40, 70) located in the firstportion (23, 53), comprising a first doped region (36, 66) of a firstconductivity type extending to the first surface (21, 51) and coupled tothe first terminal (45), and a second doped region (34, 64; 24, 54) of asecond, opposite, conductivity type underlying the first portion (23,53), wherein the rectifying junction (40, 70) does not extend to the oneor more isolation regions (28, 58), a third doped region (30, 32; 60,62) of the second conductivity type extending to the first surface (21),located in the second portion (25) and coupled to the second terminal(44), and one or more sub-isolation buried layer (SIBL) regions (26, 56)of the second conductivity type underlying the bottom (886) andextending part way up the lateral sidewalls (885) of the isolationregions (28, 58), and ohmically coupling the second (34, 64; 24, 54) andthe third (30, 32; 60, 62) doped regions without intersecting the firstdoped region (36, 66). According to a further embodiment, the firstdoped region (36) is separated from the SIBL regions (26, 56) by adistance (43) exceeding a depletion width of the rectifying junction(40, 70) at maximum rated voltage. According to a still furtherembodiment, the diode (20, 50) further comprises a WELL region (24, 54)of the second conductivity type underlying the first portion (23, 53).According to a yet further embodiment, the WELL region (24, 54)intersects the one or more SIBL regions (26, 56). According to a stillyet further embodiment, the diode (20, 50) comprises a mask (46, 76) onthe first surface (21, 51) extending laterally by a first distance (464)onto the central portion (23, 53) from the one or more isolation regions(28, 58) and having an opening of a first width (465) determining atleast in part a lateral width (365) of the first doped region. Accordingto a yet still further embodiment, the one or more isolation regions(28, 58) comprise at least two isolation regions (282-283; 582-583,583-584) laterally bounding the first portion (23, 53). According toanother embodiment, the at least two isolation regions (282-283;582-583, 583-584) are laterally separated by a first distance (286; 586,587) exceeding a lateral width (365; 665, 666) of the first doped region(36, 66). According to a still another embodiment, a difference betweenthe first distance (8621) and the lateral width (365; 665, 666) isdetermined at least in part by an amount (464) by which a mask (46) onthe first surface (21, 51) extends laterally over the first portion (23,53) from the at least two isolation regions (281-282; 582-583, 583-584).According to a yet another embodiment, the one or more isolation regions(28, 58) at the first surface (21, 51) comprises at least threeisolation regions (582, 583, 584) and the rectifying junction (70)located in the first portion (53), comprises a first rectifying junction(701) located between a first (582) and second (583) of the at leastthree isolation regions (582, 583, 584) and a second rectifying junction(702) located between the second (583) and a third (584) of the at leastthree isolation regions (582, 583, 584). According to a still yetanother embodiment, the first (701) and second (702) rectifyingjunctions do not extend to the at least three isolation regions (582,583, 584).

According to a second embodiment, there is provided a method for forminga varactor diode having a first terminal (45, 75) and a second terminal(44, 74), comprising, providing a substrate comprising a semiconductor(22, 52) having a first surface (21, 51), providing a first mask (86) onthe first surface with openings (87) extending to the first surface(21), forming cavities (88) under the openings (87) extending into thesemiconductor (22) a first distance (887), wherein the cavities (88)have sidewalls (885) and a bottom (886), creating at least onesub-isolation buried layer (SIBL) region (26) beneath the bottom (886)and part way up the sidewalls (885) of at least one of the cavities(88), filling the cavities (88) with a dielectric to create isolationregions (28) in the cavities (88) overlying the at least one SIBL region(26), forming a varactor junction (40, 70) in the substrate (22, 52)laterally proximate but not intersecting a first isolation region (282,283; 582, 583, 584), wherein a first side (36, 66) of the varactorjunction (40, 70) is coupled to the first terminal (45, 75) and a secondside (34, 64) of the varactor junction (40, 70) is coupled to the secondterminal (44, 74) through the at least one SIBL region (26,56).According to a further embodiment, the method further comprisesforming a WELL region (24, 54) ohmically coupled to the second side (34,64) of the varactor junction (40, 70). According to a still furtherembodiment, the method further comprises forming on a second side of thefirst isolation region (282, 283; 582, 583, 584) a further doped region(30, 32; 60, 62) ohmically coupled between the second terminal (44) andthe at least one SIBL region (26, 56). According to a yet furtherembodiment, the method further comprises prior to the step of formingthe varactor junction (40, 70), forming a mask (46) on the first surface(21) extending laterally inward from spaced-apart isolation regions(282, 283) by a first distance (464) thereby creating an opening in themask (46) of a first width (465) above the first region (23), whichfirst width (465) determines at least in part a second width (365) ofthe first side (36, 66) of the varactor junction (40, 70). According toa still yet further embodiment, the second width (365) is less than athird width (286; 586, 587) between the spaced-apart isolation regions(282-283; 582-583, 583-584).

According to a third embodiment, there is provided a varactor diode (20,50) having first (45) and second (44) terminals, and comprising, asubstrate (22, 52) having a first surface (21, 51), at least twoisolation regions (282-283; 582-584) in the substrate (22, 52) extendingto the first surface (21, 51), spaced apart by a first distance (286,586, 587), thereby defining a first portion (23, 53) of the varactordiode (20, 50) therebetween, a buried layer region (26, 56) having afirst part underlying at least one of the two isolation regions(282-283; 582-584) and coupled to the second terminal (44) of thevaractor diode (20, 50), and a PN junction (40, 70) formed in the firstportion (23, 53) and having a first side (36, 66) of the PN junction(40, 70) coupled to the first terminal (45) and a second side (34, 64)of the PN junction (40, 70) coupled to the buried layer region (26, 56),wherein the first side (36, 56) of the PN junction (40, 70) does notextend to the buried layer region (26, 56) or either of the at least twoisolation regions (282-283; 582-584). According to a further embodiment,the buried layer region (26, 56) further comprises upwardly extendingfirst parts (263) along sides (885) of at least one of the isolationregions (282-283; 582-584). According to a still further embodiment, thediode (20, 50) further comprises a further doped region (30, 32; 60, 62)coupling at least one of the upwardly extending first parts (263) to thesecond terminal (44, 74). According to a yet further embodiment, thefurther doped region (30, 32; 60, 62) comprises a first portion (30, 60)extending from the surface (21) at least to the upwardly extending firstparts (263) and a more heavily doped second portion (32, 62) extendingfrom the surface (21) into the first portion (30, 60). According to astill yet further embodiment, the at least two isolation regions(282-283; 582-584) comprise two pairs of isolation regions (582-583;583-584) in the substrate (22, 52) extending to the first surface (21,51), spaced apart by a first and second distances distance (586, 587),respectively, thereby defining two portions (531, 532) therebetween inwhich two varactor junctions (701, 702) are formed having first sides(661, 662) coupled to separate first terminals (751, 752) and secondsides (641, 642) coupled to a second common terminal (74), wherein thetwo varactor junctions (701, 702) coupled to separate terminals (751,752) are adapted to operate as differential inputs.

While at least one exemplary embodiment has been presented in theforegoing detailed description of the invention, it should beappreciated that a vast number of variations exist. For example, and notintended to be limiting, the various manufacturing stages 104-113 may becarried in other orders than those described above. For example,implants A-F may be performed in any order. Further, while it ispreferred to form STI regions 28 near the beginning of the manufacturingsequence, they may be formed later in the manufacturing sequence.Persons of skill in the art will understand that certain steps, as forexample, the etching of trenches 88 and providing liners 90, 91 are ofnecessity performed prior to filling in the dielectric to form STIregions 26, but many other steps can be performed in other orders thanthose illustrated and it is intended that the appended claims includesuch variations in the order of the described manufacturing stages. Itshould also be appreciated that the exemplary embodiment or exemplaryembodiments are only examples, and are not intended to limit the scope,applicability, or configuration of the invention in any way. Rather, theforegoing detailed description will provide those skilled in the artwith a convenient road map for implementing an exemplary embodiment ofthe invention, it being understood that various changes may be made inthe function and arrangement of elements described in an exemplaryembodiment without departing from the scope of the invention as setforth in the appended claims and their legal equivalents.

1. A varactor diode having first and second terminals, comprising: asubstrate having a first surface and having a first portion and a secondportion; one or more isolation regions at the first surface separatingthe first portion and the second portion and having lateral sidewallsand a bottom; a rectifying junction located in the first portion,comprising a first doped region of a first conductivity type extendingto the first surface and coupled to the first terminal, and a seconddoped region of a second, opposite, conductivity type underlying thefirst portion, wherein the rectifying junction does not extend to theone or more isolation regions; a third doped region of the secondconductivity type extending to the first surface, located in the secondportion and coupled to the second terminal; and one or moresub-isolation buried layer (SIBL) regions of the second conductivitytype underlying the bottom and extending part way up the lateralsidewalls of the isolation regions, and ohmically coupling the secondand the third doped regions without intersecting the first doped region.2. The diode of claim 1, wherein the first doped region is separatedfrom the SIBL regions by a distance exceeding a depletion width of therectifying junction at maximum rated voltage.
 3. The diode of claim 1,further comprising a WELL region of the second conductivity typeunderlying the first portion.
 4. The diode of claim 3, wherein the WELLregion intersects the one or more SIBL regions.
 5. The diode of claim 1,further comprising a mask on the first surface extending laterally by afirst distance onto the central portion from the one or more isolationregions and having an opening of a first width determining at least inpart a lateral width of the first doped region.
 6. The diode of claim 1,wherein the one or more isolation regions comprise at least twoisolation regions laterally bounding the first portion.
 7. The diode ofclaim 6, wherein the at least two isolation regions are laterallyseparated by a first distance exceeding a lateral width of the firstdoped region.
 8. The diode of claim 7, wherein a difference between thefirst distance and the lateral width is determined at least in part byan amount by which a mask on the first surface extends laterally overthe first portion from the at least two isolation regions.
 9. The diodeof claim 1, wherein the one or more isolation regions at the firstsurface comprises at least three isolation regions and the rectifyingjunction located in the first portion, comprises a first rectifyingjunction located between a first and second of the at least threeisolation regions and a second rectifying junction located between thesecond and a third of the at least three isolation regions.
 10. Thediode of claim 9, wherein the first and second rectifying junctions donot extend to the at least three isolation regions.
 11. A method forforming a varactor diode having a first terminal and a second terminal,comprising: providing a substrate comprising a semiconductor having afirst surface; providing a first mask on the first surface with openingsextending to the first surface; forming cavities under the openingsextending into the semiconductor a first distance, wherein the cavitieshave sidewalls and a bottom; creating at least one sub-isolation buriedlayer (SIBL) region beneath the bottom and part way up the sidewalls ofat least one of the cavities; filling the cavities with a dielectric tocreate isolation regions in the cavities overlying the at least one SIBLregion; and forming a varactor junction in the substrate laterallyproximate but not intersecting a first isolation region, wherein a firstside of the varactor junction is coupled to the first terminal and asecond side of the varactor junction is coupled to the second terminalthrough the at least one SIBL region.
 12. The method of claim 11,further comprising forming a WELL region ohmically coupled to the secondside of the varactor junction.
 13. The method of claim 12, furthercomprising forming on a second side of the first isolation region afurther doped region ohmically coupled between the second terminal andthe at least one SIBL region.
 14. The method of claim 11, furthercomprising prior to the step of forming the varactor junction, forming amask on the first surface extending laterally inward from spaced-apartisolation regions by a first distance thereby creating an opening in themask of a first width above the first region, which first widthdetermines at least in part a second width of the first side of thevaractor junction.
 15. The method of claim 14, wherein the second widthis less than a third width between the spaced-apart isolation regions.16. A varactor diode having first and second terminals, and comprising:a substrate having a first surface; at least two isolation regions inthe substrate extending to the first surface, spaced apart by a firstdistance, thereby defining a first portion of the varactor diodetherebetween; a buried layer region having a first part underlying atleast one of the two isolation regions and coupled to the secondterminal of the varactor diode; and a PN junction formed in the firstportion and having a first side of the PN junction coupled to the firstterminal and a second side of the PN junction coupled to the buriedlayer region, wherein the first side of the PN junction does not extendto the buried layer region or either of the at least two isolationregions.
 17. The varactor diode of claim 16, wherein the buried layerregion further comprises upwardly extending first parts along sides ofat least one of the isolation regions.
 18. The varactor diode of claim17, further comprising a further doped region coupling at least one ofthe upwardly extending first parts to the second terminal.
 19. Thevaractor diode of claim 18, wherein the further doped region comprises afirst portion extending from the surface at least to the upwardlyextending first parts and a more heavily doped second portion extendingfrom the surface into the first portion.
 20. The varactor diode of claim16, wherein the at least two isolation regions comprise two pairs ofisolation regions in the substrate extending to the first surface,spaced apart by a first and second distances distance, respectively,thereby defining two portions therebetween in which two varactorjunctions are formed having first sides coupled to separate firstterminals and second sides coupled to a second common terminal, whereinthe two varactor junctions coupled to separate terminals are adapted tooperate as differential inputs.